Continuous-Wave Electrically Pumped MBE-Grown AlGaN UV-A Lasers with Buried Tunnel Junctions
Prof. Shamsul Arafin
Electrical and Computer Engineering, Ohio State University
In this talk, I will present my research on the development of electrically pumped continuous-wave (CW) ultraviolet (UV) laser diodes based on the AlGaN material system.
Physics Research Building 1080, Smith Seminar Room
UV laser diodes hold significant promise for applications in environmental monitoring, medical diagnostics and semiconductor manufacturing. However, they face longstanding challenges, such as inefficient hole injection, poor p-type conductivity and high threshold power. I will discuss a novel device architecture incorporating a transparent tunnel junction, which replaces the conventional p-type contact and p-AlGaN cladding layer with n-AlGaN cladding layers on both the p- and n-sides of the laser structure. This approach significantly reduces the operating voltage and enhances carrier injection efficiency. By combining optimized quantum well design, advanced optical confinement structures and high-quality molecular beam epitaxy (MBE) growth, we have recently demonstrated record low- threshold UV-A lasers operating at room-temperature with much reduced power consumption. The output characteristics of these devices will also be discussed in this talk.
No registration needed, refreshments will be provided and this event is open to the public .